· PDF | This thesis is concerned with the investigation of Optical Bistability in a fully optimized Laser / Fabry-Perot system, and the related phenomena... | Find, read and cite all the research ...

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 · Guided-Wave Optical Bistability In Indium-Antimonide Thin-Films 1 January 1991 'Information Bulletin on Variable Stars (IBVS)' Abstract Various grating configurations …

 · Publisher Summary. This chapter illustrates various aspects of optical constants—namely, refractive index n and extinction coefficient k for indium antimonide …

 · Various grating configurations used to obtain optical bistability in a guided-wave format are discussed and experimentally demonstrated using indium antimonide planar waveguides. The theory of nonlinear diffusive distributed input grating coupling is presented, and the enhancement afforded by additional feedback mechanisms is verified, both ...

Various grating configurations used to obtain optical bistability in a guided-wave format are discussed and experimentally demonstrated using indium antimonide planar waveguides. The theory of nonlinear diffusive distributed input grating coupling, is presented. The enhancement afforded by additional feedback mechanisms is verified, both with an …

Guided-wave optical bistability in indium antimonide thin films. Gaetano Assanto. Download Download PDF. Full PDF Package Download Full PDF Package. This Paper. A short summary of this paper. 37 Full PDFs related to this paper.

 · For pure InSb at T≥250K lifetime of carrier (electrons and holes) is determined by Auger recombination: τ n = τ p ≈1/C n i2, where C≈5·10 -26 cm -6 s -1 is the Auger coefficient. n i is the intrinsic carrier …

The Switching Dynamics and Optimisation of Optical Bistability in Indium Antimonide. Iltaif, Abdul-Hussain Khudhair Available from UMI in association with The British Library. This …

 · The critical slowing down effect in an intrinsic semiconductor bistable device consisting of an etalon of InSb in which the dispersive nonlinearity arises from near-resonant two photon interband...

Indium Antimonide emits microwave noise when it is subjected simultaneously to parallel dc electric and magnetic fields whose values exceed certain thresholds. Comparison of the emission characteristics at 77°K with those at 4.2°K shows two major differences. 1) The threshold magnetic field at 4.2°K is approximately half of that at 77°K. 2) With increasing …

 · Indium antimonide is a crystalline compound of the elements indium and antimony. It is a narrow-gap semiconductor and is sensitive to wavelengths between one micron and five microns. It was previously used in mechanically-scanned thermal imaging systems. Today, indium antimonide is also used in terahertz thermal imaging systems.

Gallium Antimonide (GaSb) Indium Phosphide (InP) Indium Arsenide (InAs) Indium Antimonide (InSb) ... The temperature and bistability effects of silicon wafers can be …

Indium antimonide ( InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy.

 · Indium antimonide is a conductive metal. The material has good electrical properties and can be easily processed. It's also used to make batteries. It's also used in the production of photovoltaic cells. Researchers have studied a single indium antimonide nanowire. The device can detect infrared signals at room temperature. The diameter of …

 · Indium antimonide, having a very low bandgap (0.17 eV at 300 K and 0.23 eV at 77 K), is also very well suited for TPV applications and a simple homojunction can be used. However, such a junction cannot operate at room temperature and must be cooled down, typically at around 77 K. Up to now, InSb photodiodes were developed for imaging ...

 · Electrical properties of Indium Antimonide (InSb) Electrical properties Basic Parameters Mobility and Hall Effect Transport Properties in High Electric Fields Impact Ionization Recombination Parameters Basic …

 · Switching speeds have been shown to be dependent on the amount by which the system is overdriven, i.e. <=q10 ns for a vastly Diffusion, Diffraction and Reflection in Semiconductor,as indium antimonide are sufficiently long-lived and mobile to migrate significant distances in response to concentration gradients, thereby broadening and …

 · Fig. 1. The helical gap in a one-dimensional nanowire device. a An indium antimonide (InSb) nanowire device with a Rashba spin-orbit field B SO perpendicular to the wave vector k and the electric ...

INDIUM ANTIMONIDE. Full Record Related Research Authors: Dearnaley, G Publication Date: Fri Oct 31 00:00:00 EST 1969 Research Org.: Atomic Energy Research Establishment, Harwell, Eng. OSTI Identifier: 4800719 NSA Number: NSA-23-022001 Resource Type: Journal Article Journal Name: pp 366-7 of Semiconductor Nuclear …

Indium antimonide | InSb | CID 3468413 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity …

 · Being the member with the narrowest bandgap, indium antimonide (InSb) has some unique electronic and optoelectronic properties, i.e. a bandgap of 0.163 eV [ 5 ], electron mobility of 105 cm 2 V −1 s −1 [ 6 ], and thermal conductivity of 16.0 W m −1 K −1 [ …

 · Indium antimonide CAS EINECS 215-192-3 InSb 236.578 525.2 ℃ 5.76 g/cm³ 1 2 ： ...

A high-resolution mid-wave infrared indium antimonide image of the National Mall in Washington D.C. with the Capitol building. Courtesy of IR Cameras. Today's infrared imaging systems based on high-performance InSb …

Various grating configurations used to obtain optical bistability in a guided-wave format are discussed and experimentally demonstrated using indium antimonide planar waveguides. …

Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors ( E o ∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long …

Orientations: (100) & (111) with off-orientations upon requuest. Surface finish: as-cut, lapped/etched or polished (1 or 2 sides) Diameters: 50.8 ± 0.3 mm. Thickness: >= 450 microns ± 20 microns. Polycrystalline indium antimonide also available. Complete this form for a quotation on your chosen product or to receive further information or ...

Indium antimonide (InSb) is a III–V compound semiconductor. It has several applications as infrared detectors, thermal imaging cameras etc. InSb detectors are sensitive in the wavelength range of 1–5 μm. Among all the III–V semiconducting compounds, InSb has the lowest melting temperature at 523 °C .

Indium Antimonide emits microwave noise when it is subjected simultaneously to parallel dc electric and magnetic fields whose values exceed certain thresholds. Comparison of the …

1  · J10D Series Indium Antimonide Detectors. J10D Series detectors are high quality Indium Antimonide (InSb)photodiodes, providing excellent performance in the 1 to 5.5 µm wavelength region. Single crystal p–n junction technology yields high speed, low noise detectors with excellent uniformity, linearity and stability.

Microwave emission and voltage oscillations from n-InSb have been studied. Coherent megahertz oscillations with frequency ranging from 1. 8 MHz to beyond 160 MHz were observed in conjunction with the microwave emission.