· Near quantitative electrodeposition yield of 132/135La could be obtained when a potential of 6 V was applied for 20 min in an electrolyte solution (containing Ba and La) maintained at pH ∼ 3.

 · Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of structures for use …

 · Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, …

 · In recent years, lanthanum‐doped hafnium‐zirconium dioxide (La‐HZO) has garnered attention as a material for application in ferroelectric devices; moreover, atomic layer deposition has been ...

 · The layers were incorporated into around ∼10 nm thick HfO 2 thin films and an approximately 10 % lanthanum doping concentration was achieved. As a top …

 · This finding confirms experimental results for lanthanum and gadolinium showing the … Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide.

 · Lanthanum-containing complex oxides with a perovskite-type structure are attractive ionic conductors (electrolytes). They are highly stable with respect to …

Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of

 · The atomic and electronic structure of lanthanum-doped hafnium oxide ($left.mat{HfO}_{2}: mat{La}right)$ is studied within the density functional theory simulation. $mat{HfO}_{2}: mat{La}$ is a promising material for resistive and ferroelectric random-access memory elements. By considering all possible spatial …

The DIELECTRIC STACK CONTAINING LANTHANUM AND HAFNIUM patent was assigned a Application Number # 12177668 – by the United States Patent and Trademark Office (USPTO). Patent Application Number is a unique ID to identify the DIELECTRIC STACK CONTAINING LANTHANUM AND HAFNIUM mark in USPTO. The DIELECTRIC …

 · Lanthanum-containing materials with a perovskite structure belonging to the family of A 3+ B 3+ O 3 (B = Sc, Y, ... tin, niobium, hafnium, and tantalum) are usually used [55, 56]. Their presence contributes to a denser packing of the perovskite structure and an increase in the ionicity and strength of metal-oxygen bonds, due to which the ...

 · DOI: 10.1021/acs.inorgchem.7b03149 Corpus ID: 46881805; Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material. @article{Schroeder2018LanthanumDopedHO, title={Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.}, author={Uwe Schroeder and Claudia Richter and Min …

 · Hafnium aluminate (HfAlO) and nitrided hafnium aluminate (HfAlON) dielectrics were sputter deposited on Si (100) substrate. The N2/(N2+Ar) flow ratio was varied …

 · The solution was traced with the radioisotopes Y-88 or Ba-133 (or with 4 ppm inactive barium, lanthanum or hafnium). The solid was separated from solution by …

57 La Lanthanum Facts History Presence: Abundance in Nature and Around Us Parts per billion (ppb) by weight / by atoms (1ppb =10^-7 %) Crystal Structure and Atomic Structure Atomic and Orbital Properties Isotopes and Nuclear Properties Hafnium has 5 stable naturally occuring isotopes while Lanthanum has 1 stable naturally occuring isotopes.

 · Experimental details. LHO films were deposited on p-Si substrates by using ECR-ALD with La (iPrCp) 3 and TEMAHf as the lanthanum and hafnium precursors, respectively, and O 2 plasma as an oxygen source. The temperatures of the La (iPrCp) 3 and the TEMAHf were maintained at 150 °C and 60 °C, respectively. The La source was …

1  · La-containing material is regarded as an effective phosphate adsorbent due to the high affinity between La 3+ and phosphate,, . Since the ... Mechanisms of orthophosphate removal from water by lanthanum carbonate and other lanthanum-containing materials. Sci. Total Environ., 820 (2022), Article 153153, 10.1016/j.scitotenv.2022.153153. Article.

 · Near quantitative electrodeposition yield of 132/135La could be obtained when a potential of 6 V was applied for 20 min in an electrolyte solution (containing Ba and La) …

 · Lanthanum is the first element in the rare earth or lanthanide series. It is the model for all the other trivalent rare earths and it is the second most abundant of the rare earths after cerium. Lanthanum is found in minerals such as monazite and bastnasite. The name lanthanum originates from the Greek word Lanthaneia, which means 'to lie hidden'.

 · This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now. However, no comprehensive overview that links structural properties to the electrical …

 · By considering all possible spatial configurations of the oxygen vacancy and two lanthanum atoms in the hafnium substitution position in 95-atom supercell of five crystalline phases of HfO 2, the energetically optimal structures of were found. For these structures of crystalline HfO 2 with the 2.1 at.

The element : Lanthanum was discovered by G. Mosander in year 1838 in Sweden. Lanthanum derived its name from the Greek lanthanein, meaning 'to lie hidden'.The element : Hafnium was discovered by D. Coster and G. von Hevesy in year 1922 in Denmark. Hafnium derived its name from Hafnia, the New Latin name for Copenhagen.Discovery: …

 · Lanthanum-containing proton-conducting electrolytes with a perovskite structure. ... bium, hafnium, and tantalum) are usually used [55, 56]. Thei r pre senc e cont ribu tes to a dens er pa cking of.

Lanthanum oxide or lanthanoid-containing oxides are etched from substrates intended for microelectronic devices using a buffered halide solution, the active ingredient preferably …

 · Lanthanum hafnium oxide dielectrics Oct 20, 2006 - Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.

The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a hafnium lanthanide oxynitride film. Inventors: Forbes, Leonard (Corvallis, OR, US) Ahn, Kie Y. (Chappaqua, NY, US) Bhattacharyya, Arup (Essex Junction, VT, US) Application Number: 11/515143

 · Hafnium aluminate (HfAlO) and nitrided hafnium aluminate (HfAlON) dielectrics were sputter deposited on Si (100) substrate. The N2/(N2+Ar) flow ratio was varied between 0 and 66.6% in order to ...

introducing a hafnium-containing precursor to the substrate. 2. The method of claim 1, wherein forming a dielectric layer containing a lanthanum hafnium oxide layer includes …

 · lanthanum forming hafnium layer Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a …

 · [Show full abstract] the lanthanum and hafnium precursors, respectively. The leakage current of the HLH capacitor with 2/10/2 nm layers was about 2.20 × 10-10 A/cm2 at 1MV/cm and the dielectric ...

U.S. Department of Energy Office of Scientific and Technical Information. Search terms: Advanced search options. ...

Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.

 · CROSS REFERENCE TO RELATED APPLICATION. This application is a continuation of U.S. application Ser. No. 11/584,229, filed Oct. 20, 2006, now U.S. Pat. No. 7,411,237 ...

Various compositions were synthesized and the selectivity of these materials was determined for inactive lanthanum, hafnium and barium, and radiotracers yttrium-88 and barium-133. The hybrid materials show very efficient lanthanum/barium separation; the response for zirconium phosphate was even better.